삼성 DDR SDRAM DIMM/SODIMM 모델 번호 구별법

KM M 3 83 H 13 3 4 C T C G 5
1 2 3 4 5 6 7 8 9 10 11 12 13

 

1. Samsung Memory(KM)
2. Memory Module(M)
3. DIMM Configuration
      – 3 : 8 Bytes DIMM
      – 4 : 8 Bytes SODIMM
4. Data bits & Module Type
      – 66 : x64 168pin Unbuffered DIMM
      – 74 : x72 168pin Unbuffered DIMM
      – 68 : x64 184pin Unbuffered DIMM
      – 81 : x72 184pin Unbuffered DIMM
      – 69 : x64 168pin Unbuffered DIMM
w/FET Switch

      – 82 : x72 168pin Unbuffered DIMM
w/FET Switch

      – 83 : x72 184pin Registered DIMM
      – 84 : x72 184pin Registered DIMM
w/FET Switch

      – 70 : x64 200pin Unbuffered DIMM
      – 85 : x72 200pin Unbuffered DIMM
      – 71 : x64 200pin Unbuffered DIMM
w/FET Switch

      – 86 : x72 200pin Unbuffered DIMM
w/FET Switch

      – 87 : x72 200pin Registered DIMM
      – 88 : x72 200pin Registered DIMM
w/FET Switch
5. Product & Voltage(Vdd)
      – H : DDR SDRAM(3.3V Vdd)
      – L : DDR SDRAM(2.5V Vdd)
6. Density
      – 4 : 4M
      – 8 : 8M
      – 16 : 16M
      – 32 : 32M
      – 64 : 64M
      – 12 : 128M
      – 25 : 256M
      – 9 : 8M(for 128Mb/512Mb)
      – 17 : 16M(for 128Mb/512Mb)
      – 33 : 32M(for 128Mb/512Mb)
      – 65 : 64M(for 128Mb/512Mb)
      – 13 : 128M(for 128Mb/512Mb)
7. Refresh, # of Banks in Comp.
& Interface

      – 0 : 4K/64ms Refresh(15.6μs), 4 Banks,
Mixed Interface(LVTTL & SSTL_3)

      – 1 : 4K/64ms Refresh(15.6μs), 4 Banks,
SSTL_2

      – 2 : 8K/64ms Refresh(7.8μs), 4 Banks,
SSTL_2

      – 3 : 16K/128ms Refresh(7.8μs), 4 Banks,
SSTL_2
8. Composition Component
      – 2 : x4
      – 3 : x8
      – 4 : x16
      – 5 : x32
9. Component Revision
      – Blank : 1st Generation
      – A : 2nd Generation
      – B : 3rd Generation
      – C : 4th Generation
10. Package Type
      – T : 66pin TSOP2
      – B : BGA
      – C : uBGA(CSP)
11. PCB Revision & Type
      – Blank : 1st Rev.
      – A : 2nd Rev.
      – B : 3rd Rev.
      – C : 4th Rev.
12. Power
      – G : Auto & Self refresh
      – F : Auto & Self refresh with Low power
13. Speed
      – 5 : 5ns, 200MHz(400Mbps/pin)
      – 6 : 6ns, 166MHz(333Mbps/pin)
      – Y : 6.7ns, 150MHz(300Mbps/pin)
      – Z : 7.5ns, 133MHz(266Mbps/pin)
      – 8 : 8ns, 125MHz(250Mbps/pin)
      – 0 : 10ns, 100MHz(200Mbps/pin)

원본 : 삼성 DDR SDRAM DIMM/SODIMM 모델 번호 구별법

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